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| UNISONIC TECHNOLOGIES CO., LTD 4N65 4 Amps, 650 Volts N-CHANNEL POWER MOSFET 1 Power MOSFET TO-220 DESCRIPTION The UTC 4N65 is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applications including power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. 1 1 TO-220F TO-220F1 FEATURES * RDS(ON) = 2.5 @VGS = 10 V * Ultra Low Gate Charge ( typical 15 nC ) * Low Reverse Transfer Capacitance ( CRSS = Typical 8.0 pF ) * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness 1 1 TO-251 TO-252 SYMBOL 2.Drain 1 1 TO-263 TO-262 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free 4N65L-TA3-T 4N65G-TA3-T 4N65L- TF1-T 4N65G-TF1-T 4N65L- TF3-T 4N65G-TF3-T 4N65L-TM3-T 4N65G-TM3-T 4N65L-TN3-R 4N65G-TN3-R 4N65L-T2Q-T 4N65G-T2Q-T 4N65L-TQ2-R 4N65G-TQ2-R 4N65L-TQ2-T 4N65G-TQ2-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F1 TO-220F TO-251 TO-252 TO-262 TO-263 TO-263 1 G G G G G G G G Pin Assignment 2 3 D S D S D S D S D S D S D S D S Packing Tube Tube Tube Tube Tape Reel Tube Tape Reel Tube www.unisonic.com.tw Copyright (c) 2010 Unisonic Technologies Co., Ltd 1 of 8 QW-R502-397.B 4N65 ABSOLUTE MAXIMUM RATINGS (TC = 25, unless otherwise specified) Power MOSFET PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS 30 V Avalanche Current (Note 2) IAR 4.4 A Continuous ID 4.0 A Drain Current Pulsed (Note 2) IDM 16 A Single Pulsed (Note 3) EAS 260 mJ Avalanche Energy 10.6 mJ Repetitive (Note 2) EAR Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-220/TO-262/TO-263 106 W TO-220F/TO-220F1 36 W Power Dissipation PD TO-251 50 W TO-252 50 W Junction Temperature TJ +150 Operating Temperature TOPR -55 ~ +150 Storage Temperature TSTG -55 ~ +150 Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature 3. L = 30mH, IAS = 4A, VDD = 50V, RG = 25 , Starting TJ = 25C 4. ISD4.4A, di/dt 200A/s, VDDBVDSS, Starting TJ = 25C ELECTRICAL CHARACTERISTICS (TC =25, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current SYMBOL BVDSS IDSS TEST CONDITIONS MIN TYP MAX UNIT 650 10 100 -100 0.6 2.0 4.0 2.5 520 70 8 670 90 11 V A nA nA V/ V pF pF pF VGS = 0 V, ID = 250 A VDS = 650 V, VGS = 0 V Forward VGS = 30 V, VDS = 0 V Gate-Source Leakage Current IGSS Reverse VGS = -30 V, VDS = 0 V Breakdown Voltage Temperature Coefficient BVDSS/TJ ID = 250 A, Referenced to 25C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250 A Static Drain-Source On-State Resistance RDS(ON) VGS = 10 V, ID = 2.2 A DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS = 25 V, VGS = 0 V, f = 1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 8 QW-R502-397.B 4N65 ELECTRICAL CHARACTERISTICS(Cont.) Power MOSFET PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) 13 35 VDD = 300V, ID = 4.0A, RG = 25 Turn-On Rise Time tR 45 100 (Note 1, 2) Turn-Off Delay Time tD(OFF) 25 60 Turn-Off Fall Time tF 35 80 Total Gate Charge QG 15 20 VDS= 480V,ID= 4.0A, VGS= 10 V Gate-Source Charge QGS 3.4 (Note 1, 2) Gate-Drain Charge QGD 7.1 SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 4.4 A 1.4 Maximum Continuous Drain-Source Diode IS 4.4 Forward Current Maximum Pulsed Drain-Source Diode ISM 17.6 Forward Current VGS = 0 V, IS = 4.4 A, Reverse Recovery Time tRR 250 dIF/dt = 100 A/s (Note 1) 1.5 Reverse Recovery Charge QRR Note: 1. Pulse Test: Pulse width300s, Duty cycle2% 2. Essentially independent of operating temperature UNIT ns ns ns ns nC nC nC V A A ns C UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 8 QW-R502-397.B 4N65 TEST CIRCUITS AND WAVEFORMS Power MOSFET D.U.T. + VDS - + L RG Driver VGS Same Type as D.U.T. * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test VDD Fig. 1A Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period P.W. D= P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) IRM Body Diode Reverse Current di/dt Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Fig. 1B Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 8 QW-R502-397.B 4N65 TEST CIRCUITS AND WAVEFORMS (Cont.) Power MOSFET Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform L VDS BVDSS IAS RD VDD D.U.T. tp tp Time VDD ID(t) VDS(t) 10V Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 8 QW-R502-397.B 4N65 TYPICAL CHARACTERISTICS Breakdown Voltage Variation vs. Temperature 1.2 Drain-Source Breakdown Voltage, BVDSS (Normalized) (V) Drain-Source On-Resistance, RDS(ON) (Normalized) () 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -100 Power MOSFET On-Resistance Junction Temperature 1.1 1.0 0.9 Note: 1. VGS=0V 2. ID=250A -50 0 50 100 150 200 Note: 1. VGS=10V 2. ID=4A -50 0 50 100 150 200 0.8 -100 Junction Temperature, TJ () Junction Temperature, TJ () On-State Characteristics 10 VGS 10V 9V 8V 7V 6V 5.5V 5 V Bottorm:5.0V Top: Transfer Characteristics 10 25 5.0V 1 150 1 0.1 Notes: 1. 250s Pulse Test 2. TC=25 0.1 2 4 6 Notes: 1. VDS=50V 2. 250s Pulse Test 0.1 1 10 8 10 Drain-to-Source Voltage, VDS (V) Gate-Source Voltage, VGS (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 8 QW-R502-397.B 4N65 TYPICAL CHARACTERISTICS(Cont.) Power MOSFET Thermal Response, JC (t) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw PD (w) Gate-Source Voltage, VGS (V) Capacitance (pF) 7 of 8 QW-R502-397.B 4N65 TYPICAL CHARACTERISTICS(Cont.) Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. Drain Current, ID (A) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 8 of 8 QW-R502-397.B |
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